PART |
Description |
Maker |
PTF10052 |
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10136 |
6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10119 |
12 Watts, 2.1.2 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10135 |
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10048 |
30 Watts, 2.1.2 GHz, W-CDMA GOLDMOS Field Effect Transistor 30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PE6806 PE6806-16 |
2 Watts Low Power WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
PH1214-40M |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 401.20 - 1 .40千兆赫,150毫秒脉冲0%的
|
Ecliptek, Corp. MACOM[Tyco Electronics]
|
PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦,11日至1月三日千兆赫,为3ms脉冲0%的关税
|
MACOM[Tyco Electronics]
|
PE6820 |
50 Watts WR-42 RF Load Up To 26.5 GHz
|
Pasternack Enterprises, Inc.
|